product standards mos fet FG6943010R (eu rohs / ul-94 v-0 / msl:level 1 compliant) ? marking symbol v7 ? basic part number ? packaging 000 pcs / reel (standard) ? absolute maximum ratings ta = 25 ?? c page panasonic ssmini6-f3-b 5. drain(fet1) 1. source(fet1) 4. pin name 3. drain(fet2) 6. drain(fet1) source(fet2) gate(fet1) 5. gate(fet2) vv 2. sot-666 sc-107c code jeita internal connection ma 8 mw source(fet2) 1. source(fet1) 4. gate(fet2) 1 3. unit : mm FG6943010R silicon n-channel mosfet(fet1)silicon p-channel mosfet(fet2) for switching of mama drain(fet2) 6. 2. gate(fet1) ? features ? low drive voltage: 2.5 v drive ? halogen-free / rohs compliant fj330301 + fk330301 (individual ) idp 200 fet1 drain-source voltagegate-source voltage drain current pulse drain current unit 30 vgs ? 12 v vds v symbol rating embossed type (thermo-compression sealing) 8 parameter 100 id fet2 drain-source voltage vds -30 gate-source voltage vgs ? 12 drain current id -100 pulse drain current idp -200 ma overall total power dissipation pt 125 operating ambient temperature topr -40 to + 85 channel temperature tch 150 ? c ? c +150 ? c storage temperature tstg -55 to 1.6 1.6 (0.6) 1.2 0.13 0.2 1.0 (0.5) (0.5) 123 4 5 6 3 (d2) (s2) 4 1 (s1) 2 (g1) (d1) 6 (g2) 5 fet1 fet2 doc no. tt4-ea-12659 revision. 2 established : 2010-06-30 revised : 2013-10-10 downloaded from: http:///
product standards mos fet FG6943010R fet1 measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.*1 fet1 turn-on and turn-off test circuit page note) 1. 2. turn-off time *1 toff vdd = 3 v, vgs = 3 to 0 v id = 10 ma pf output capacitance pf turn-on time *1 ton vdd = 3 v, vgs = 0 to 3 v 100 ns ? electrical characteristics ta = 25 ?? c ? 3 ? ? c ?? forward transfer admittance |yfs| id = 10 ma, vds = 3.0 v2 0 5 5 m s 2of8 parameter symbol conditions min typ max unit drain-source breakdown voltage vdss id = 1 ma, vgs = 0 30 v ? a ? a drain-source cutoff current idss 1.0 vds = 30 v, vgs = 0 gate-source cutoff current igss vgs = ? 10 v, vds = 0 id = 1.0 ? a, vds = 3.0 v 0.5 ? 10 1.5 3 v 36 input capacitance ciss vds = 3 v, vgs = 0, f = 1 mhz 1.0 drain-source on resistance rds(on)1 id = 10 ma, vgs = 2.5 v gate threshold voltage vth 12 coss rds(on)2 id = 10 ma, vgs = 4.0 v 2 pf reverse transfer capacitance crss 3 7 id = 10 ma ns 100 50 vdd=3v vin vgs=03v id=10ma rl=300 vout ds g 50 vdd=3v vin vgs=03v id=10ma rl=300 vout ds g doc no. tt4-ea-12659 revision. 2 established : 2010-06-30 revised : 2013-10-10 downloaded from: http:///
product standards mos fet FG6943010R fet2 measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.*1 fet2 turn-on and turn-off test circuit page 3 of 8 ? electrical characteristics ta = 25 ?? c ? 3 ? ? c parameter symbol conditions min typ max unit drain-source breakdown voltage vdss id = -1ma, vgs = 0 -30 v -1.0 ? a gate-source cutoff current igss vgs = ? 10 v, vds = 0 ? 10 ? a drain-source cutoff current vth id = -1.0 ? a, vds = -3.0 v -0.5 idss vds = -30 v, vgs = 0 -1.5 v drain-source on resistance rds(on)1 id = -10 ma, vgs = -2.5 v 7 17 ? gate threshold voltage id = -10 ma, vgs = -4.0 v 4 -1.0 7 ? forward transfer admittance |yfs| id = -10 ma, vds = -3.0 v 20 40 ms rds(on)2 ciss vds = -3 v, vgs = 0, f = 1 mhz reverse transfer capacitance crss 12 pf output capacitance coss 7 pf input capacitance 3p f turn-on time *1 ton vdd = -3 v, vgs = 0 to -3 v, 100 ns id = -10 ma turn-off time *1 toff vdd = -3 v, vgs = -3 to 0 v, id = -10 ma 100 ns note) 1. 2. 50 vin vgs=0-3v vdd=-3v id=-10ma rl=300 vout d s g 50 vin vgs=0-3v vdd=-3v id=-10ma rl=300 vout d s g doc no. tt4-ea-12659 revision. 2 established : 2010-06-30 revised : 2013-10-10 downloaded from: http:///
product standards mos fet FG6943010R technical data ( reference ) page id - vds id - vgs vds - vgs rds(on) - id 4of capacitance - vds 8 fet1(n-ch.) 0 0.05 0.1 0 0.5 1 drain-source voltage vds (v) drain current id (a) vgs = 4.0 v 2.0 v 1.5 v 2.5 v 0.00001 0.0001 0.001 0.01 0.1 1 0123 gate-source voltage vgs (v) drain current id (a) ta = 85 -40 25 0 0.1 0.2 0.3 012345 gate-source voltage vgs (v) drain-source voltage vds (v) 5 ma id = 20 ma 10 ma 100 1000 10000 0.001 0.01 0.1 drain current id (a) drain-source on-state resistance rds(on) (m ? ) vgs = 4.0 v 2.5 v 1 10 100 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss doc no. tt4-ea-12659 revision. 2 established : 2010-06-30 revised : 2013-10-10 downloaded from: http:///
product standards mos fet FG6943010R technical data ( reference ) page 5 of rth - tsw 8 vth - ta rds(on) - ta pd - ta safe operating area fet1(n-ch.) 0 0.1 0.2 0 50 100 150 temperature ta ( ? c) total power dissipation pd (w) 0 1 2 3 -50 0 50 100 150 temperature ( ) drain-source on-resistance rds(on) ( ? ) 4.0 v vgs = 2.5v 1 1.5 2 -50 0 50 100 150 temperature ( ) gate-source treshold voltage vth (v) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( ? c/w) 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 drain-source voltage vds (v) drain current id (a) idp = 0.2 a operation in this areais limited by rds(on) ta = 25 , glass epoxy board (25.425.4t0.8 mm)coated with copper foil, which has more than 300 mm 2 . 1 ms 10 ms 100 ms 1 s d c doc no. tt4-ea-12659 revision. 2 established : 2010-06-30 revised : 2013-10-10 downloaded from: http:///
product standards mos fet FG6943010R technical data ( reference ) page 6 of capacitance - vds 8 id - vds id - vgs vds - vgs rds(on) - id fet2(p-ch.) -0.1 -0.05 0 -1 -0.8 -0.6 -0.4 -0.2 0 drain-source voltage vds (v) drain current id (a) -2.0 v -2.5 v vgs = -4.0 v -1.5 v -0.1 -0.05 0 -3 -2 -1 0 gate-source voltage vgs (v) drain current id (a) ta = 85 -40 25 1 10 100 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss -0.5-0.4 -0.3 -0.2 -0.1 0 -6 -5 -4 -3 -2 -1 0 gate-source voltage vgs (v) drain-source voltage vds (v) -5 ma -10 ma id= -20 ma 100 1000 10000 100000 1000000 -0.001 -0.01 -0.1 drain current id (a) drain-source on-state resistance rds(on) ( ? ) vgs = -4.0 v -2.5 v 1000 100 10 1 0.1 doc no. tt4-ea-12659 revision. 2 established : 2010-06-30 revised : 2013-10-10 downloaded from: http:///
product standards mos fet FG6943010R technical data ( reference ) page vth - ta rds(on) - ta pd - ta safe operating area 7of rth -tsw 8 0 0.1 0.2 0 50 100 150 temperature ta ( ? c) total power dissipation pd (w) 0 2 4 6 8 10 12 14 -50 0 50 100 150 temperature ( ) drain-source on-resistance rds(on) ( ? ) 4.0 v vgs = 2.5 v 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( ? c/w) -3 -2.5 -2 -1.5 -1 -50 0 50 100 150 temperature ( ) gate-source theshold voltage vth (v) -1.0e-04 -1.0e-03 -1.0e-02 -1.0e-01 -1.0e+00 -1.0e+01 -0.01 -0.1 -1 -10 -100 drain-source voltage vds (v) drain current id (a) idp = -0.2 a ta = 25 c,glass epoxy board (25.4 25.4 t0.8mm) coated with copper foil, which has more than 300mm 2 . 100 ms 1 s dc 1 ms 10 ms operation in this areais limited by rds(on) fet2(p-ch.) doc no. tt4-ea-12659 revision. 2 established : 2010-06-30 revised : 2013-10-10 downloaded from: http:///
product standards mos fet FG6943010R unit: mm page 8 ssmini6-f3-b ? 8of land pattern (reference) (unit : mm 0.13 +0.05 -0.02 1.00 0.05 1.60 0.05 (0.5) (0.5) 1.60 0.05 0 to 0.05 0.20 0.05 0.55 0.05 0.20 +0.05 -0.02 1.20 0.05 (0.27) 123 4 5 6 (5) (5) 0.4 0.35 1.6 0.5 0.5 doc no. tt4-ea-12659 revision. 2 established : 2010-06-30 revised : 2013-10-10 downloaded from: http:///
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